李俊 教授
邮箱：lijun_yt@shu.edu.cn
澳门永利yl6776
导师介绍：
主要从事新型氧化物薄膜晶体管、人工突触器件、柔性智能传感及有机光电子材料与器件研究。近年来在国际权威学术刊物上发表SCI 论文100 余篇，授权国家发明专利12 项。主持国家自然科学基金、国家重大仪器专项课题、上海市科委基础重点项目、上海市人才发展资金、企业横向重点项目等10余项，作为技术骨干参与过国家重点研发计划、国家“863”重大基础研究项目、上海市科委基础重大项目等。获上海市技术进步奖一等奖1项。担任国际信息显示学会SID北京分会技术委员会委员，兼任美国物理学会、化学学会及英国IOP 等20 余种SCI刊物的长期评审专家。指导研究生多人获得上海市优秀毕业生、澳门永利yl6776优秀毕业生、国家奖学金等。
招收半导体材料、微电子、应用物理、集成电路等相关专业背景的硕士、博士研究生及博士后。
研究方向：
薄膜晶体管、人工突触器件、柔性电子、有机光电子器件
教育背景：
2011年博士毕业于澳门永利yl6776材料学专业
工作经历：
2020年3月-至今 澳门永利yl6776 教授
2014年3月-2020年3月 澳门永利yl6776 副研究员
2011年3月-2014年3月 澳门永利yl6776 博士后/讲师
科研成果及获奖情况：
近年来在国际权威学术刊物上发表SCI 论文100 余篇，授权国家发明专利12 项。获得上海市科技进步一等奖、上海市人才发展资金、发光学报优秀论文奖、澳门永利yl6776年度突出贡献奖、澳门永利yl6776自强杯优秀指导教师等奖项。
近五年代表性论文：
1)J. Li*, W. H. Fu, Y. X. Lei, L. K. Li, W. Q. Zhu, J. H. Zhang*, Oxygen-Vacancy-Induced Synaptic Plasticity in an Electrospun InGdO Nanofiber Transistor for a Gas Sensory System with a Learning Function. ACS Appl. Mater. Interfaces 14 (2022) 8587.
2)J. Li*, S. K. Wen, D. L. Jiang, L. K. Li, J. H. Zhang, Electrospun InSnMgO Nanofibers Channel to Construct 3D Interface in a Synaptic Transistor for Neuromorphic Electronics. IEEE Electron Device Lett. 43 (2022) 1653.
3)L. Li, J. Li*, W. Fo, Y. Lei, S. Wen, Q. Yang, J. Zhang, Highly sensitive and selective low-cost SnZrO nanofiber field-effect transistor for N,N-dimethylformamide vapour detection at room temperature. Sensors and Actuators: B. Chemical 367 (2022) 132155.
4)J. Li*, L. Li, Q. Chen, W. Zhu, J. Zhang*, Ultrasensitive room-temperature acetone gas sensors employing green-solvent-processed aligned InNdO nanofiber field-effect transistors. J. Mater. Chem. C 10 (2022) 860. （封面论文）
5)Y. Lei, J. Li*, W. Fu, J. Zhang, Synapse transistors based on Li7La3Zr2O12 (LLZO) nanofibers/polyvinyl alcohol (PVA) composite gate dielectric for neuromorphic application. J. Mater. Chem. C 10 (2022) 16379.
6)J. Li*; Y.H. Yang; W. H. Fu; Q. Chen; D. L. Jiang; W. Q. Zhu; J. H. Zhang*; Flexible transparent InZnO synapse transistor based on Li1.3Al0.3Ti0.7(PO4)3/polyvinyl pyrrolidone nanocomposites electrolyte film for neuromorphic computing, Mater. Today Phys. 15 (2020) 100264.
7)Y. H. Zhou, J. Li*, Y. H. Yang, Q. Chen, J. H. Zhang, Artificial synapse emulated through fully aqueous solution-processed low-voltage In2O3 thin-film transistor with Gd2O3 solid electrolyte, ACS Appl. Mater. Interfaces 12 (2020) 980.
8)L. K. Li, J. Li*, D. L. Jiang, W. H. Fu，W. Q. Zhu, J. H. Zhang, Self-Powered Synaptic Transistor for Artificial Perception. IEEE Electron Device Lett. 42 (2021)1002.
9)J. Li*, Y. H. Yang, Q. Chen, W. Q. Zhu, J. H. Zhang*, Aqueous-solution-processed proton-conducting carbon nitride/polyvinylpyrrolidone composite electrolytes for low-power synaptic transistor with learning and memory functions. J. Mater. Chem. C 8 (2020) 4065.
10)J. Li*, D. L. Jiang, Y. H. Yang, Y. H. Zhou, Q. Chen, J. H. Zhang*, Li‐Ion Doping as a Strategy to Modulate the Electrical‐Double‐Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous‐Solution‐Processed In2O3/AlLiO Film. Adv. Electron. Mater. 6 (2020) 1901363.
11)J. Li*, Q. Chen, Y. H. Yang, W. Q. Zhu, X. F. Li, J. H. Zhang*, Amelioration of interfacial combination and suppression of oxygen vacancies for high performance environmentally friendly electrospun SnYO nanofiber field-effect transistors. J. Mater. Chem. C 8 (2020) 5222.
12)J. Li*; Q. Chen, W. H. Fu, Y. H. Yang, W. Q. Zhu, J. H. Zhang*; Electrospun Yb-Doped In2O3 Nanofiber Field-Effect Transistors for Highly Sensitive Ethanol Sensors. ACS Appl. Mater. Interfaces 12 (2020) 38425.
13)Q. Chen, J. Li*, W. Fu, Y. Yang, W. Zhu, J. Zhang, Detection of N,N-dimethylformamide vapor down to ppb level using electrospun InYbO nanofibers field-effect transistor. Sensors and Actuators: B. Chemical 323 (2020) 128676.
14)Q. Chen, J. Li*, Y. H. Yang, W. Q. Zhu, J. H. Zhang, Combustion synthesis of electrospun LaInO nanofiber for high-performance field-effect transistors. Nanotechnology 30 (2019) 425205.
15)Y. H. Yang, J. Li*, Q. Chen, Y. H. Zhou, W. Q. Zhu, J. H. Zhang, Double-gate InZnO synaptic transistor with aqueous-solution-processed wheat flour electrolyte. Org. Electron. 77 (2020) 105518.
16)Y. H. Yang, J. Li*, Q. Chen, W. Q. Zhu, X. F. Li, J. H. Zhang, Graphitic carbon nitride/polyvinylpyrrolidone composite dielectric for low-voltage flexible InZnO thin film transistor grown on a polyethylene terephthalate substrate. IEEE Electron Device Lett. 41(2020) 381.
17)C. X. Huang, J. Li*, D. Y. Zhong, C. Y. Zhao, J. H. Zhang, X. Y. Jiang, Z. L. Zhang, Realization of solution-processed semiconducting single-walled carbon nanotubes thin film transistors with atomic layer deposited ZrAlOx gate insulator. Appl. Phys. Lett. 110 (2017) 253510.
18)J. Li*, Y. Z. Fu, C. X. Huang, J. H. Zhang, X. Y. Jiang, Z. L. Zhang, Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor, Appl. Phys. Lett. 108 (2016)143505.
19)J. Li*, Y. H. Zhou, D. Y. Zhong, X. F. Li, J. H. Zhang, Simultaneous Enhancement of Electrical Performance and Negative Bias Illumination Stability for Low-Temperature Solution-Processed SnO2 Thin-Film Transistors by Fluorine Incorporation. IEEE Trans. Electron Dev. 66 (2019) 4205.
20)J. Li, D. Y. Zhong, C. X. Huang, X. F. Li, J. H. Zhang*, High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT. IEEE Trans. Electron Dev. 65 (2018) 2838.
21)Y. H. Zhou, J. Li*, Y. H. Yang, Q. Chen, X. F. Li, J. H. Zhang, Low-temperature fabrication of Sr-N co-doped In2O3 thin film by aqueous route and its application to high performance InSrNO thin film transistor. J. Phys. D: Appl. Phys. 52 (2019) 435101.
22)D. Y. Zhong, J. Li*, C. Y. Zhao, C. X. Huang, J. H. Zhang, X. F. Li, X. Y. Jiang, Z. L. Zhang, Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition. IEEE Trans. Electron Dev. 65 (2018) 520.
23)C. Y. Zhao, J. Li*, D. Y. Zhong, C. X. Huang, J. H. Zhang, X. F. Li, X. Y. Jiang, Z. L. Zhang, Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors with High-k ZrO2 Gate Insulator. IEEE Trans. Electron Dev. 65 (2018) 526.
24)Y. H. Zhou, J. Li*, D.Y. Zhong, X. F. Li, J. H. Zhang, Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress. IEEE Trans. Electron Dev. 66 (2019) 1308.
